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Advanced Power MOSFET                                              SSP4N90AS
FEATURES
                                                                    BVDSS = 900 V
  Avalanche Rugged Technology
  Rugged Gate Oxide Technology
                                                                    RDS(on) = 3.7 
  Lower Input Capacitance                                           ID = 4.5 A
  Improved Gate Charge
  Extended Safe Operating Area
  Lower Leakage Current : 25 

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