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2SA2018F
PNP Silicon
Elektronische Bauelemente
General Purpose Transistor
RoHS Compliant Product
FEATURES
SOT-523
High Collector Current
Dim Min Max
Low VCE(sat) - VCE(sat) -250mV at IC = -200mA/IB=-10mA
A 1.50 1.70
A B 0.78 0.82
L C 0.80 0.82
MARKING CODE
D 0.28 0.32
BW 3
S Top View B G 0.90 1.10
2 1
H 0.00 0.10
J 0.10 0.20
D
K 0.35 0.41
3. Collector G
L 0.49 0.51
2. Base J
C S 1.50 1.70
1. Emitter
K All Dimension in mm
H
Maximum Ratings (Ta=25 o C unless otherwise specified)
Parameter Symbol Limits Unit
Collector-base voltage VCBO -15 V
Collector-emitter voltage VCEO -12 V
Emitter-base voltage VEBO -6 V
Collector current (Continuous) IC -0.5 A
Collector power dissipation PC 0.15 W
o
Junction temperature Tj -55~+150 C
Storage temperature o
Tstg -55~+150 C
Electrical Characteristics (Tamb=25 o C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO -15 V IC=-10 A, IE=0
Collector-emitter breakdown voltage BVCEO -12 V IC=-1mA, IB=0
Emitter-base breakdown voltage BVEBO -6 V IE=-10 A, IC=0
Collector cutoff current ICBO -0.1 A VCB=-15V, IE=0
Emitter cutoff current IEBO -0.1 A VEB=-6V, IC=0
DC current gain hFE 270 680 VCE=-2V, IC=-10mA
Collector-emitter saturation voltage VCE(sat) -0.25 V IC=-200mA, IB=-10mA
Transition frequency fT 260 MHz VCE=-2V, IC=-10mA, f=100MHz
Collector Output capacitance Cob 6.5 pF VCB=-10V, IE=0, f=1MHz
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page 1 of 2
2SA2018F
PNP Silicon
Elektronische Bauelemente
General Purpose Transistor
z(OHFWULFDO CKDUDFWHULVWLF CXUYHV
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page 2 of 2
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