Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors Secos 2sb1119-1619
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2SB1119/2SD1619
PNP Silicon
Elektronische Bauelemente
Medium Power Transistor
RoHS Compliant Product
D
D1
A
SOT-89
E1
E
FEATURES b1
Power dissipation e
b
C
L
P CM : 500mW Tamb=25 e1
1.BASE
Collector current
2.COLLECTOR Dimensions In Millimeters Dimensions In Inches
Symbol
ICM : -1 A
3.EMITTER
Min Max Min Max
A 1.400 1.600 0.055 0.063
Collector-base voltage b 0.320 0.520 0.013 0.020
b1 0.360 0.560 0.014 0.022
VB(BR)CBO : -25 V c 0.350 0.440 0.014 0.017
D 4.400 4.600 0.173 0.181
Operating and storage junction temperature range D1 1.400 1.800 0.055 0.071
E 2.300 2.600 0.091 0.102
TJ Tstg: -55 to +150 E1 3.940 4.250 0.155 0.167
e 1.500TYP 0.060TYP
e1 2.900 3.100 0.114 0.122
L 0.900 1.100 0.035 0.043
ELECTRICAL CHARACTERISTICS Tamb=25 unlessotherwise specified CLASSIFICATION OF hFE(1)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=-10 A IE=0 -25 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1 mA , IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE= -10 A IC=0 -5 V
Collector cut-off current ICBO VCB= -20 V , IE=0 -0.1 A
Collector cut-off current ICEO VCE= -20 V , IB=0 -0.1 A
Emitter cut-off current IEBO VEB=-4V , IC=0 -0.1 A
hFE 1 VCE= -2V, IC= -50mA 100 560
DC current gain
hFE 2 VCE=-2V, IC= -1A 40
Collector-emitter saturation voltage VCE(sat) IC=-0.5A, IB= -50mA -0.7 V
Base-emitter saturation voltage VBE(sat) IC=-0.5A, IB= -50mA -1.2 V
Transition frequency fT VCE= -10V, IC=-50mA 180 MHz
Collector output capacitance Cob VCB=-10V, f = 1MH 25 pF
Marking 2SB1119 : BB
2SD1619 : DB
CLASSIFICATION OF hFE(1)
Rank R S T U
Range 100-200 140-280 200-400 280-560
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page 1 of 3
2SB1119/2SD1619
PNP Silicon
Elektronische Bauelemente
Medium Power Transistor
Electrical characteristic curves
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page 2 of 3
2SB1119/2SD1619
PNP Silicon
Elektronische Bauelemente
Medium Power Transistor
Electrical characteristic curves
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page 3 of 3
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