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2SC2873
NPN Silicon
Elektronische Bauelemente Epitaxial Planar Transistor
RoHS Compliant Product
SOT-89
FEATURES
Low saturation voltage
High speed switching time
Complementary to 2SA1213
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 50 V
VCEO Collector-Emitter Voltage 50 V REF.
Millimeter
REF.
Millimeter
Min. Max. Min. Max.
VEBO Emitter-Base Voltage 5 V A 4.4 4.6 G 3.00 REF.
IC Collector Current -Continuous 2 A B 4.05 4.25 H 1.50 REF.
C 1.50 1.70 I 0.40 0.52
PC Collector Power Dissipation 500 mW D 1.30 1.50 J 1.40 1.60
E 2.40 2.60 K 0.35 0.41
TJ Junction Temperature 150
F 0.89 1.20 L 5 q TYP.
Tstg Storage Temperature -55-150 M 0.70 REF.
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 50 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE=100A , IC=0 5 V
Collector cut-off current ICBO VCB=50V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A
hFE1 VCE=2V, IC=500mA 70 240
DC current gain
hFE2 VCE=2V, IC=2A 40
Collector-emitter saturation voltage VCE(sat) IC=1A, IB=50mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=1A, IB=50mA 1.2 V
Transition frequency fT VCE=2V, IC=500mA 120 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 30 pF
Turn on Time ton 0.1
Switching Time Storage Time tstg VCC=30V, IC=1A, IB1=-IB2=0.05A 1.0 s
Fall Time tf 0.1
CLASSIFICATION OF hFE(1)
Rank O Y
Range 70-140 120-240
Marking MO MY
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
08-May-2007 Rev. A Page 1 of 3
2SC2873
NPN Silicon
Elektronische Bauelemente Epitaxial Planar Transistor
Typical Characteristics
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
08-May-2007 Rev. A Page 2 of 3
2SC2873
NPN Silicon
Elektronische Bauelemente Epitaxial Planar Transistor
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
08-May-2007 Rev. A Page 3 of 3
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