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2sd1898


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                                                                                                              2SD1898
                                                                                                                 NPN Silicon
                   Elektronische Bauelemente                                                            Epitaxial Planar Transistor

                                                                         RoHS Compliant Product



      Description
                                                                                                                      SOT-89
      The 2SD1898 is designed for switching applications.




                     Millimeter                     Millimeter
        REF.                              REF.
                  Min.       Max.                 Min.      Max.
          A        4.4        4.6          G       3.00 REF.
          B       4.05       4.25          H       1.50 REF.
          C       1.50       1.70          I      0.40      0.52
          D       1.30       1.50          J      1.40      1.60
          E       2.40       2.60          K      0.35      0.41
          F       0.89       1.20          L        5 q TYP.
                                           M        0.70 REF.




       Absolute Maximum Ratings at Ta = 25: :
                   Parameter                              Symbol                               Ratings                                    Unit
       Junction Temperature                                  Tj                                   +150
       Storage Temperature                                  Tstg                              -55 ~ +150
       Collector to Base Voltage                           VCBO                                   100                                       V
       Collector to Emitter Voltage                        VCEO                                    80                                       V
       Emitter to Base Voltage                             VEBO                                   5.0                                       V
                                                             IC                                    1                                        A
       Collector Current
                                                 ICP (Single pulse Pw=20ms)                        2                                        A
       Total Power Dissipation                              PD                                    500                                      mW



       Characteristics                at Ta = 25: :
               Symbol               Min.           Typ.            Max.            Unit                            Test Conditions
       BVCBO                        100              -               -              V        IC=50uA
       BVCEO                        80               -               -              V        IC=1mA
       BVEBO                         5               -               -              V        IE=50uA
       ICBO                           -              -              1               uA       VCB=80V
       IEBO                           -              -              1               uA       VEB=4V
       VCE(sat)                       -              -             400              mV       IC=500mA, IB=20mA
       hFE                          82               -             390                       VCE=3V, IC=500mA
       fT                                          100               -             MHZ       VCE=10V,IC=50mA,f=100MHZ
       Cob                            -             25               -              pF       VCB=10V,IE=0, f=1MHz



       Classification Of hFE
                Rank                       P                  Q                         R
                hFE                   82-180               120-270                 180-390



       Marking Code : DF



  http://www.SeCoSGmbH.com                                                                                   Any changing of specification will not be informed individual

08-May-2007 Rev. A                                                                                                                                              Page 1 of 2
                                                    2SD1898
                                                      NPN Silicon
                   Elektronische Bauelemente   Epitaxial Planar Transistor



       Characteristics Curve




  http://www.SeCoSGmbH.com                          Any changing of specification will not be informed individual

08-May-2007 Rev. A                                                                                     Page 2 of 2



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