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CZT5401
PNP Transistor
Elektronische Bauelemente
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
Description
The CZT5401 is designed for general
purpose applications requiring high
breakdown voltages.
REF. REF.
Min. Max. Min. Max.
A 6.70 7.30 B 13 T YP.
C
C 2.90 3.10 J 2.30 REF.
5 4 0 1 D 0.02 0.10 1 6.30 6.70
Date Code
E 0C 10 C 2 6.30 6.70
I 0.60 0.80 3 3.30 3.70
B C E H 0.25 0.35 4 3.30 3.70
o 5 1.40 1.80
MAXIMUM RATINGS* (Tamb =25 C , unless otherwise specified)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -160 V
VCEO Collector-Emitter Voltage -150 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current-Continuous -600 mA
PD Total Power Dissipation 1.5 W
TJ,Tstg Junction and Storage Temperature -55~-150 O
C
o
ELECTRICAL CHARACTERISTICS Tamb=25 C unlessotherwise specified
Parameter Symbol MIN TYP MAX UNIT Test conditions
Collector-base breakdown voltage _ _ V
V(BR)CBO -160 Ic=-100u A,IE=0
_ _
Collector-emitter breakdown voltage V(BR)CEO -150 V IC= -1mA,IB=0
_ _
Emitter-base breakdown voltage V(BR)EBO -5 V IE= -10u A,IC=0
_ _
Collector cut-off current ICBO -50 nA VCB= -120V,IE=0
IEBO _ _ -50 nA VEB=-3V,IC=0
Emitter cut-off current
_ _ _
hFE 1 50 VCE= -5V, IC= -1mA
DC current gain hFE 2 80 160 400 _ VCE=-5V, IC= -10mA
_ _ _
hFE 3 50 VCE= -5V, IC= -50mA
VCE(sat) 1 _ _ I C=-10mA,IB= -1mA
-200 mV
Collector-emitter saturation voltage _ _
VCE(sat) 2 -500 I C=-50mA,IB= -5mA
VBE(sat) 1 _ _
Base-emitter saturation voltage -1 IC=-10mA,IB= -1mA
_ _ V
VBE(sat) 2 -1 IC=-50mA,IB= -5mA
VCE=-10V,IC=-10mA ,
Transition frequency fT 100 _ 300 MHz
f = 100MHz
Collector output capacitance Cob _ _ VCB=-10V, f=1MHz,IE=0
6 pF
CLASSIFICATION OF hFE
Rank A N C
Range 80-200 100-240 160-400
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page 1 of 2
CZT5401
PNP Transistor
Elektronische Bauelemente
Epitaxial Planar Transistor
Characteristics Curve
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page2 of 2
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