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BC856A, B
BC857A, B, C
Elektronische Bauelemente BC858A, B, C
A suffix of "-C" specifies halogen & lead-free
FEATURES
SOT-23
n
General Purpose Transistor PNP Type A Dim Min Max
L
n
Collect current : - 0.1A A 2.800 3.040
Operating Temp. : -55 C ~ +150 C
O O
n
3 B 1.200 1.400
RoHS com pliant product Top View B S
n
1 2
C 0.890 1.110
D 0.370 0.500
V G G 1.780 2.040
C OLLE C TOR
3 H 0.013 0.100
3
C J 0.085 0.177
1 1 K 0.450 0.600
D H J
B AS E K L 0.890 1.020
2
S 2.100 2.500
2
V 0.450 0.600
E MITTE R
All Dimension in mm
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage BC856 -80
BC857 VCBO Ic= -10 A I E=0 -50 V
BC858 -30
Collector-emitter breakdown voltage BC856 -65
BC857 VCEO Ic= -10 mA IB=0 -45 V
BC858 -30
Emitter-base breakdown voltage VEBO IE= -10 A IC=0 -5 V
Collector cut-off current BC856 VCB= -70 V , IE=0
BC857 ICBO VCB= -45 V , IE=0 -0.1 A
BC858 VCB= -25 V , IE=0
Collector cut-off current BC856 VCE= -60 V , IB=0
BC857 ICEO VCE= -40 V , IB=0 -0.1 A
BC858 VCE= -25 V , IB=0
Emitter cut-off current IEBO V EB= -5 V , IC=0 -0.1 A
DC current gain BC856A,857A,858A 125 250
BC856B,857B,858B HFE 1 VCE= -5V, IC= -2mA 220 475
BC857C,BC858C 420 800
Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -5 mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC= -100 mA, IB= -5mA -1.1 V
VCE= -5 V, IC= -10mA
Transition frequency fT 100 MHz
f=100MHz
DEVICE MARKING
BC856A=3A; BC856B=3B; BC857A=3E; BC857B=3F; BC857C=3G; BC858A=3J; BC858B=3K; BC858C=3L
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2004 Rev. B Page 1 of 3
BC856A, B
BC857A, B, C
Elektronische Bauelemente BC858A, B, C
Typical Characteristics BC857, BC858
2.0 -1.0
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