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bcp5401


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                                                                                  BCP5401
                                                                                  PNP Epitaxial
                 Elektronische Bauelemente
                                                                                 Planar Transistor
                                                 RoHS Compliant Product


                                                                                         SOT-89

   Features

   Designed for gereral prupose application requiring
   high breakdown voltage.




                               1
                                   2
                                       3

                                   1.BASE
                                   2.COLLECTOR
                                   3.EMITTER

                                                                     REF.                             REF.
                                                                             Min.         Max.                    Min.     Max.
                                                                      A       4.4          4.6          G          3.00 REF.
                                                                      B      4.05         4.25          H          1.50 REF.
        Marking:5401                                                  C      1.50         1.70          I         0.40     0.52
               XXXX                                                   D      1.30         1.50          J         1.40     1.60
               (xxxx = Date Code)                                     E      2.40         2.60          K         0.35     0.41
                                                                      F      0.89         1.20          L           5 q TYP.
                                                                                                        M           0.70 REF.



ABSOLUTE MAXIMUM RATINGS (Tamb=25 o C, unless otherwise specified)
                           Parameter                  Symbol                               Value                                      Unit
 Collector-Base Voltage                                 VCBO                              -160                                         V
 Collector-Emitter Voltage                              VCEO                             -150                                          V
 Emitter-Base Voltage                                   VEBO                               -5                                          V
 Collector Current                                        IC                             -600                                          mA
 Total Power Dissipation                                 PD                                 1                                          W
 Operating Junction and Storage Temperature            TJ,TSTG                        +150,-55 ~ +150                                  o
                                                                                                                                        C


ELECTRICAL CHARACTERISTICS (Tamb=25 o C)
                           Parameter               Symbol           Min.    Typ. Max.           Unit            Test Conditions
 Collector-Base Breakdown Voltage                    BVCBO         -160      -          -        V       IC=-100



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