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                                                                                  BCP5551
                                                                                  NPN Epitaxial
                 Elektronische Bauelemente                                       Planar Transistor
                                                 RoHS Compliant Product


                                                                                         SOT-89

   Features

    Designed for gereral prupose application requiring
    high breakdown voltage.




                               1
                                   2
                                       3

                                   1.BASE
                                   2.COLLECTOR
                                   3.EMITTER

                                                                     REF.                             REF.
                                                                             Min.         Max.                     Min.     Max.
                                                                      A       4.4          4.6          G           3.00 REF.
                                                                      B      4.05         4.25          H           1.50 REF.
         Marking: 5551                                                C      1.50         1.70          I          0.40     0.52
                XXXX                                                  D      1.30         1.50          J          1.40     1.60
                (xxxx = Date Code)                                    E      2.40         2.60          K          0.35     0.41
                                                                      F      0.89         1.20          L            5 q TYP.
                                                                                                        M            0.70 REF.



 ABSOLUTE MAXIMUM RATINGS (Tamb=25 o C, unless otherwise specified)
                           Parameter                  Symbol                               Value                                      Unit
  Collector-Base Voltage                                VCBO                                180                                        V
  Collector-Emitter Voltage                             VCEO                                160                                        V
  Emitter-Base Voltage                                  VEBO                                 6                                         V
  Collector Current                                       IC                                600                                        mA
  Total Power Dissipation                                PD                                 1.2                                        W
  Operating Junction and Storage Temperature           TJ,TSTG                           -55 ~ +150                                    o
                                                                                                                                        C


 ELECTRICAL CHARACTERISTICS (Tamb=25 o C)
                           Parameter               Symbol           Min.    Typ. Max.           Unit            Test Conditions
 Collector-Base Breakdown Voltage                    BVCBO          180      -         -         V        IC= 100

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