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bcp69


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                                                                                                       BCP69
                                                                                                    PNP Transistor
                  Elektronische Bauelemente
                                                                                                Silicon Epitaxial Transistor
                                                                RoHS Compliant Product
                                                                                                             SOT-223
    Description
    The BCP69 is designed for guse in
    low voltage and medium power
    applications.


    Features
   * VCEO : -20V
   * IC : 1A



                                                                                                   Millimeter                     Millimeter
                                                                                         REF.                        REF.
                                                                                                  Min.    Max.                  Min.     Max.
                                                                                          A       6.70    7.30         B           13 T YP.
                                                                                                                                       C
                                                                                          C       2.90    3.10         J          2.30 REF.
                                                                                          D       0.02    0.10         1        6.30     6.70
                        BCP69
          Date Code                                                                       E        0C      10 C        2        6.30     6.70
                                                                                          I       0.60    0.80         3        3.30     3.70
                                                                                          H       0.25    0.35         4        3.30     3.70
                        B     C      E                                                                                 5        1.40     1.80




                                                o
     MAXIMUM RATINGS* (Tamb =25 C, unless otherwise specified)
          Symbol                                         Parameter                                           Value                        Units
           VCBO              Collector-Base Voltage                                                           - 25                          V
           VCEO              Collector-Emitter Voltage                                                        - 20                          V
           VEBO              Emitter-Base Voltage                                                              -5                           V
           IC               Collector Current                                                                  -1                           A
           PD                Total Power Dissipation                                                           1.5                          W
          TJ,Tstg           Junction and Storage Temperature                                               -65~-150                          C
                                                                                                                                            O




                                                          o
    ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
                Parameter                   Symbol        Min      Typ.    Max     Uni        Test Conditions
     Collector-Base Breakdown Voltage       BVCBO        - 25       -        -      V         I C=-100



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