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                                                                                                        MMBT2907Q
                                                                                                         PNP Silicon
                     Elektronische Bauelemente
                                                                                                  General Purpose Transistor
                                                               RoHS Compliant Product
                                                                                                                           D

                                                                                                                          D1

      * Features                                                                                                                                                                 A


                                                                   SOT-89




                                                                                                   E1




                                                                                                                                                      E
                                                                                                                                     b1



                                                               1
         Power dissipation                                         2                                                                           b
                                                                                                                     e                                            C
                                                                       3




                                                                                                        L
                                                O

                     PCM : 1.25 W (Temp.= 25 C)                                                                            e1


         Collector current                                             1.B AS E
                                                                                                                           Dimensions In Millimeters                   Dimensions In Inches
                                                                       2.C OLLE C T OR
                     ICM     : -0.6 A                                                                   Symbol
                                                                                                        3                Min                  Max                Min                     Max
                                                                       3.E MIT T E R                    A                1.400                1.600              0.055                   0.063
         Collector-base voltage                                                                         b                0.320                0.520              0.013                   0.020
                                                                                                        b1               0.360                0.560              0.014                   0.022
                     V(BR)CBO : -60 V                                                                   c                0.350                0.440              0.014                   0.017
                                                                                                        D                4.400                4.600              0.173                   0.181
         Operating & Storage junction Temperature                                                       D1               1.400                1.800              0.055                   0.071

                                  O       O                                                             E                2.300                2.600              0.091                   0.102
                     Tj, Tstg : -55 C~ +150 C                                                           E1               3.940                4.250              0.155                   0.167
                                                                                                        e                          1.500TYP                                  0.060TYP
                                                                                                        e1               2.900                3.100              0.114                   0.122
                                                                                                        L                0.900                1.100              0.035                   0.043



     Electrical Characteristics( Tamb=25OC unless otherwise specified)
                  Parameter                          Symbol                   Test       conditions                      MIN                              MAX                            UNIT
     Collector-base breakdown voltage               V(BR)CBO               Ic= -10A           IE=0                        -60                                                                    V
     Collector-emitter breakdown voltage            V(BR)CEO               Ic= -10mA IB=0                                 -60                                                                    V
     Emitter-base breakdown voltage                 V(BR)EBO               IE=-10A IC=0                                    -5                                                                    V
     Collector cut-off current                        ICBO                 VCB=-50 V , IE=0                                                               -0. 01                          A
     Emitter cut-off current                          IEBO                 VEB= -3V ,       IC=0                                                          -0. 01                          A
                                                      hFE(1)               VCE=-1V, IC= -0.1mA                           75
                                                      hFE(2)               VCE=-1V, IC= -1mA                             100
     DC current gain                                  hFE(3)               VCE=-1V, IC=-10mA                             100
                                                      hFE(4)               VCE=-2V, IC= -150mA                           100                              300
                                                      hFE(5)               VCE=-2V, IC=-500mA                            50
                                                    VCE(sat)1              IC=-150 mA, IB=-15mA                                                           -0.4                                   V
     Collector-emitter saturation voltage
                                                    VCE(sat)2              IC=-500 mA, IB=- 50mA                                                          -1.6                                   V
                                                    VBE(sat)1              IC=-150 mA, IB=-15mA                                                           -1.3                                   V
     Base-emitter saturation voltage
                                                    VBE(sat)2              IC=-500 mA, IB= -50mA                                                          -2.6                                   V
                                                                           VCE=-20V, IC= -50mA
     Transition frequency                                 fT                                                             200                                                              MHz
                                                                           f=100MHz
                                                                           VCB=-10V, IE= 0
     Output Capacitance                             Cob                                                                                                     8                                 pF
                                                                           f=1MHz
                                                                           VEB=-2V,       IC= 0
     Input Capacitance                              Cib                                                                                                    30                                 pF
                                                                           f=1MHz
     Delay time                                      td                    VCC=-30V,
                                                                                                                                                           12                                 nS

     Rise time                                       tr                    IC=-150mA,IB1=-15mA
                                                                                                                                                           30                                 nS

     Storage time                                    tS                    IC=-150mA                                                                       300                                nS
     Fall time                                       tf                    IB1= IB2= -15mA                                                                 65                                 nS
  http://www.SeCoSGmbH.com                                                                                       Any changing of specification will not be informed individual

01-Jun-2002 Rev. A                                                                                                                                                                                   Page 1 of 3
                                                                                                                                                                                     MMBT2907Q
                                                                                                                                                                                     PNP Silicon
                                                                       Elektronische Bauelemente                                                                               General Purpose Transistor

                                                                                                                     TYPICAL CHARACTERISTICS

                                                                3.0
                                                                                     VCE = 



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