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mmbt2222q


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                                                                                                              MMBT2222Q
                                                                                                                       NPN Silicon
                     Elektronische Bauelemente                                                                General Purpose Transistor

                                                                     RoHS Compliant Product

                                   SOT-89

                                   1.BASE                                D

                                   2.COLLECTOR                           D1                               A       Symbol
                                                                                                                                   Dimensions In Millimeters            Dimensions In Inches
                                                                                                                                 Min                  Max         Min                     Max
                                   3.EMITTER                                                                      A              1.400                1.600       0.055                   0.063
  FEATURES                                                                                                        b              0.320                0.520       0.013                   0.020
                                                                                                                  b1             0.360                0.560       0.014                   0.022
                                                 E1                                                               c              0.350                0.440       0.014                   0.017




                                                                                        E
                                                                                                                  D              4.400                4.600       0.173                   0.181
   Power dissipation
                                                                              b1
                                                                                                                  D1             1.400                1.800       0.055                   0.071
                                                                                                                  E              2.300                2.600       0.091                   0.102
      PCM : 1 W        Ta m b=25                                                                                  E1             3.940                4.250       0.155                   0.167
                                                                                    b            C                                         1.500TYP                           0.060TYP
                                                                                                                  e
   Collector current                                                 e
                                                      L




                                                                                                                  e1             2.900                3.100       0.114                   0.122
                                                                         e1                                       L              0.900                1.100       0.035                   0.043
      I CM : 0.6 A
   Collector-base voltage
     V (BR)CBO :     75 V
   Operating and storage junction temperature range
      T J T stg : -55 to +150

    ELECTRICAL               CHARACTERISTICS          Tamb=25                      unless             otherwise        specified
                   Parameter                               Symbol                  Test         conditions                 MIN                         MAX                     UNIT
     Collector-base breakdown voltage                     V(BR)CBO            Ic= 10        A         IE=0                 75                                                       V
     Collector-emitter breakdown voltage                  V(BR)CEO            Ic= 10mA               IB=0                  40                                                       V
     Emitter-base breakdown voltage                       V(BR)EBO            IE=10         A        IC=0                   6                                                       V
     Collector cut-off current                              ICBO              VCB=60V ,           IE=0                                                 0. 01                             A
     Emitter cut-off current                                IEBO              VEB= 3V ,              IC=0                                              0. 01                             A
                                                            hFE(1)            VCE=10V,           IC= 0.1mA                 35
                                                            hFE(2)            VCE=10V,           IC= 1mA                   50
                                                            hFE(3)            VCE=10V,           IC= 10mA                  75
     DC current gain
                                                            hFE(4)            VCE=10V,           IC= 150mA                 100                          300
                                                            hFE(5)            VCE=1V,           IC= 150mA                  50
                                                            hFE(6)            VCE=10V,           IC= 500mA                 40
                                                          VCE(sat)            IC=500 mA, IB= 50mA                                                             1                     V
     Collector-emitter saturation voltage
                                                          VCE(sat)            IC=150 mA, IB= 15mA                                                        0.3                        V
                                                          VBE(sat)            IC=500 mA, IB= 50mA                                                        2.0                        V
     Base-emitter saturation voltage
                                                          VBE(sat)            IC=150 mA, IB=15mA                           0.6                           1.2                        V
                                                                              VCE=20V,           IC= 20mA
     Transition frequency                                       fT                                                         300                                                  MHz
                                                                              f=100MHz
                                                                              VCB=10V,           I E= 0
     Output Capacitance                                   Cob                                                                                                 8                    pF
                                                                              f=1MHz
     Delay time                                            td                 VCC=30V, IC=150mA
                                                                                                                                                          10                      nS

     Rise time                                             tr                 VBE(off)=0.5V,IB1=15mA
                                                                                                                                                          25                      nS

     Storage time                                          tS                 VCC=30V, IC=150mA
                                                                                                                                                        225                       nS

     Fall time                                             tf                 IB1= IB2= 15mA
                                                                                                                                                          60                      nS

  http://www.SeCoSGmbH.com                                                                                      Any changing of specification will not be informed individual

01-Jun-2002 Rev. A                                                                                                                                                                        Page 1 of 4
                                                                                                                                                    MMBT2222Q
                                                                                                                                                                NPN Silicon
                                                    Elektronische Bauelemente                                                                        General Purpose Transistor




   SWITCHING TIME EQUIVALENT TEST CIRCUITS



                                                                                                   +30 V                                                                              +30 V
                                                                     1.0 to 100 s,                                                                1.0 to 100 s,                        200
                                                                                                   200                           +16 V
                                              +16 V                  DUTY CYCLE  2.0%                                                             DUTY CYCLE  2.0%

                                      0                                                                                            0
                                                                                  1 k                                                  -14 V                         1k                       CS* < 10 pF
                                     -2 V                                                                  CS* < 10 pF
                                                            < 2 ns                                                                                  < 20 ns
                                                                                                                                                                     1N914

                                                                                                            Scope rise time < 4 ns                                           -4 V
                                                                                                            *Total shunt capacitance of test jig,
                                                                                                            connectors, and oscilloscope.
                                                             Figure 1. Turn



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