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MMBT4403
PNP Silicon
Elektronische Bauelemente Switching Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
SOT-23
Dim Min Max
COLLECTOR A A 2.800 3.040
3 L B 1.200 1.400
3
C 0.890 1.110
1 Top View B S D 0.370 0.500
BASE 1 2
3 G 1.780 2.040
H 0.013 0.100
2 V G
1 J 0.085 0.177
EMITTER
2 K 0.450 0.600
C
L 0.890 1.020
D H J S 2.100 2.500
K
V 0.450 0.600
All Dimension in mm
MAXIMUM RATINGS* TA=25 unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -40 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.6 A
PC Collector Dissipation 0.3 W
TJ, Tstg Junction and Storage Temperature -55-150
ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=-100A , IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -40 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-35V , IE=0 -0.1 A
Collector cut-off current ICEO VCE=-35 V , IB=0 -0.1 A
Emitter cut-off current IEBO VEB=-4V , IC=0 -0.1 A
DC current gain hFE VCE=-2 V, IC= -150mA 100 300
Collector-emitter saturation voltage VCE(sat) IC=-150 mA, IB=-15mA -0.4 V
Base-emitter saturation voltage VBE(sat) IC=- 150 mA, IB=-15mA -0.95 V
VCE= -10V, IC= -20mA
Transition frequency fT 200 MHz
f = 100MHz
MARKING: 2T
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2004 Rev. B Page 1 of 4
MMBT4403
PNP Silicon
Elektronische Bauelemente
Switching Transistor
TRANSIENT CHARACTERISTICS
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