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mmbt5551


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                                                                                                      MMBT5551
                                                                                                              NPN Silicon
                     Elektronische Bauelemente                                                   General Purpose Transistor

                                                           RoHS Compliant Product
                                                  A suffix of "-C" specifies halogen & lead-free
                                                                                                                                            SOT-23

                                                                         A                                                          Dim       Min        Max
                                                                             L                                                      A        2.800       3.040

                                                                         3
                                                                                                                                    B        1.200       1.400
      FEATURES                                                        Top View             B S                                      C        0.890       1.110
                                                                  1              2
                                                                                                                                    D        0.370       0.500

       Power dissipation                                  V              G
                                                                                                                                    G        1.780       2.040
                                                                                                                                    H        0.013       0.100
                     PCM:            0.3 W (Tamb=25oC)                                                                               J       0.085       0.177
                                                                                             C
       Collector current                                                                                                            K        0.450       0.600
                                                              D                        H                               J             L       0.890       1.020
                     ICM:            0.6 A                                                            K
                                                                                                                                    S        2.100       2.500
       Collector-base voltage                                                                                                       V        0.450       0.600
                                                                                                      COLLECTOR
                     V(BR)CBO: 180        V                                                                                         All Dimension in mm

       Operating and storage junction temperature range                              BASE

                                                                                            EMITTER
                     TJ, Tstg: -55    to +150oC

      ELECTRICAL CHARACTERISTICS (Tamb=25oC                               unless otherwise specified)

                     Parameter                         Symbol                        Test    conditions                       MIN          MAX           UNIT

      Collector-base breakdown voltage                 V(BR)CBO                       Ic= 100



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