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MMBT591
PNP Silicon
Elektronische Bauelemente General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
SOT-23
FEATURES Dim Min Max
COLLECTOR
3
3 A 2.800 3.040
Power dissipation 1 B 1.200 1.400
2 1 C 0.890 1.110
PCM : 0.5 W
BASE
Collector Current D 0.370 0.500
G 1.780 2.040
ICM : -1 A A 2
L H 0.013 0.100
Collector-base voltage EMITTER
J 0.085 0.177
V(BR)CBO : -80 V 3
K 0.450 0.600
Top View B S
Operating & storage junction temperature 1 2 L 0.890 1.020
O O
Tj, Tstg : - 55 C ~ + 150 C S 2.100 2.500
V G
V 0.450 0.600
All Dimension in mm
Marking: 591 C
D H J
K
ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=-100A,IE=0 -80 V
Collector-emitter breakdown voltage V(BR)CEO1 Ic=-10mA,IB=0 -60 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A,IC=0 -5 V
Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 A
hFE(1) VCE=-5V,IC=-1mA 100
1
hFE(2) VCE=-5V,IC=-500mA 100 300
DC current gain
hFE(3) 1 VCE=-5V,IC=-1A 80
hFE(4) 1 VCE=-5V,IC=-2A 15
1
VCE(sat)1 IC=-500mA,IB=-50mA -0.3 V
Collector-emitter saturation voltage
VCE(sat)2 1 IC=-1A,IB=-100mA -0.6 V
Base-emitter saturation voltage VBE(sat) 1 IC=-1A,IB=-100mA -1.2 V
Base-emitter voltage VBE1 VCE=-5V,IC=-1A -1 V
Transition frequency fT VCE=-10V,IC=-50mA,,f=100MHz 150 MHz
Collector output capacitance Cob VCB=-10V,f=1MHz 10 pF
1
Measured under pulsed conditions,Pulse width=300s, Duty cycle2%.
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
MMBT591
PNP Silicon
Elektronische Bauelemente
General Purpose Transistor
TYPICAL CHARACTERISTICS
0.6 o 0.6
+25C IC/IB=10
0.5 0.5
0.4 0.4
0.3 0.3 o
-55C
IC/IB=10 o
+25C
IC/IB=50 o
0.2 0.2 +100C
0.1 0.1
0 0
1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A
IC-Collector Current IC-Collector Current
V CE(sat) v IC V CE(sat) v IC
400 VCE=5V IC/IB=10
1.0
o
300 +100C
0.8
200 +25C
o
0.6
o
-55C
o
+25C
0.4 +100C
o
o
100 -55C
0.2
0 0
1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A
IC-Collector Current IC-Collector Current
h FE V IC V BE(sat) v IC
1.2 10
VCE=5V
1.0
0.8 1
0.6 DC
o 1s
-55C 100ms
0.4 +25C
o
0.1 10ms
o
+100C 1ms
100us
0.2
0 0.01
1mA 10mA 100mA 1A 10A 0.1V 1V 10V 100V
IC-Collector Current VCE - Collector Emitter Voltage (V)
V BE(on) v I C S afe Operating Area
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
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