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MMBTA92
PNP Silicon
Elektronische Bauelemente General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURES SOT-23
Dim Min Max
Pb-free is available.
A 2.800 3.040
Power dissipation & Collector current
Pcm: 0.3W Icm: -0.3A B 1.200 1.400
High voltage V(BR): -300V C 0.890 1.110
A
L D 0.370 0.500
G 1.780 2.040
3
COLLECTOR H 0.013 0.100
Top View B S
3 1 2 J 0.085 0.177
K 0.450 0.600
1 V G
L 0.890 1.020
BASE 3
S 2.100 2.500
C
1 V 0.450 0.600
2
EMITTER 2 D H J All Dimension in mm
K
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= -100uA IE=0 -300 V
Collector-emitter breakdown voltage V(BR)CEO Ic= -1 mA IB=0 -300 V
Emitter-base breakdown voltage V(BR)EBO IE= -100 A IC=0 -5 V
Collector cut-off current ICBO VCB=-200 V , IE=0 -0.25 A
Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 A
HFE 1 VCE= -10V, IC= - 1mA 60
DC current gain HFE 2 VCE= -10V, IC=-10mA 100 200
HFE 3 VCE=-10V, IC=-30mA 60
Collector-emitter saturation voltage VCE(sat) IC=-20 mA, IB= -2mA -0.2 V
Base-emitter saturation voltage VBE(sat) IC= -20 m A, IB=-2mA -0.9 V
VCE=-20V, IC=-10mA
Transition frequency fT 50 MHz
f=30MHz
DEVICE MARKING
DEVICE MARKING
MMBTA92=2D
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2004 Rev.B Page 1 of 2
MMBTA92
PNP Silicon
Elektronische Bauelemente General Purpose Transistor
MMBTA92
300
VCE = 10 Vdc
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