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MMDT2907A
PNP Silicon
Elektronische Bauelemente
Multi-Chip Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen-free SOT-363
* Features .055(1.40) 8
o
.047(1.20) 0
o
.026TYP
(0.65TYP)
.021REF
Power dissipation (0.525)REF
PCM : 0.15 W (Tamp.= 25 C)
O
.096(2.45) .053(1.35)
.085(2.15) .045(1.15)
Collector current
ICM : -0.6 A .018(0.46)
.010(0.26)
.014(0.35) .006(0.15)
Collector-base voltage C2 B1 E1 .006(0.15) .003(0.08)
.087(2.20)
V(BR)CBO : -60 V .079(2.00) .004(0.10)
.000(0.00)
Operating & Storage junction Temperature
.043(1.10) .039(1.00)
.035(0.90) .035(0.90)
Tj, Tstg : -55 C~ +150 C
O O
E2 B2 C1
Marking: K2F, 2F Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25 O C unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= -10A IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO Ic= -10mA IB=0 -60 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A IC=0 -5 V
Collector cut-off current ICBO VCB=-50 V , IE=0 -0. 01 A
Emitter cut-off current IEBO VEB= -3V , IC=0 -0. 01 A
hFE(1) VCE=-10V, IC= -0.1mA 75
hFE(2) VCE=-10V, IC= -1mA 100
DC current gain hFE(3) VCE=-10V, IC=-10mA 100
hFE(4) VCE=-10V, IC= -150mA 100 300
hFE(5) VCE=-10V, IC=-500mA 50
VCE(sat)1 IC=-150 mA, IB=-15mA -0.4 V
Collector-emitter saturation voltage
VCE(sat)2 IC=-500 mA, IB=- 50mA -1.6 V
VBE(sat)1 IC=-150 mA, IB=-15mA -1.3 V
Base-emitter saturation voltage
VBE(sat)2 IC=-500 mA, IB= -50mA -2.6 V
VCE=-20V, IC= -50mA
Transition frequency fT 200 MHz
f=100MHz
VCB=-10V, IE= 0
Output Capacitance Cob 8 pF
f=1MHz
VEB=-2V, IC= 0
Input Capacitance Cib 30 pF
f=1MHz
Delay time td VCC=-30V,
10 nS
Rise time tr IC=-150mA,IB1=-15mA
40 nS
Storage time tS VCC=-6V, IC=-150mA 225 nS
Fall time tf IB1= IB2= -15mA 60 nS
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jan-2007 Rev. C Page 1 of 3
MMDT2907A
PNP Silicon
Elektronische Bauelemente Multi-Chip Transistor
TYPICAL CHARACTERISTICS
3.0
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