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MMDT2222A
NPN Silicon
Elektronische Bauelemente
Multi-Chip Transistor
RoHS Compliant Product SOT-363
* Features .055(1.40)
.047(1.20)
.026TYP
8
0
o
o
(0.65TYP)
.021REF
(0.525)REF
Power dissipation
.096(2.45) .053(1.35)
PCM : 0.15 W (Tamp.= 25 C)
O
.085(2.15) .045(1.15)
Collector current .018(0.46)
.010(0.26)
ICM : 0.6 A C1 B2 E2
.014(0.35) .006(0.15)
.006(0.15) .003(0.08)
Collector-base voltage .087(2.20)
.079(2.00) .004(0.10)
V(BR)CBO : 75 V .000(0.00)
E1 .043(1.10)
Operating & Storage junction Temperature
B1 C2 .039(1.00)
.035(0.90) .035(0.90)
Tj, Tstg : -55 C~ +150 C
O O
Marking: K1P
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25 C unless otherwise specified)
O
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 10A IE=0 75 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10A IC=0 6 V
Collector cut-off current ICBO VCB=60 V , IE=0 0. 01 A
Emitter cut-off current IEBO VEB= 3V , IC=0 0. 01 A
hFE(1) VCE=10V, IC= 0.1mA 35
hFE(2) VCE=10V, IC= 1mA 50
hFE(3) VCE=10V, IC= 10mA 75
DC current gain
hFE(4) VCE=10V, IC= 150mA 100 300
hFE(5) VCE=10V, IC= 500mA 40
hFE(6) VCE=1V, IC= 150mA 35
VCE(sat)1 IC=150 mA, IB= 15mA 0.3 V
Collector-emitter saturation voltage
VCE(sat)2 IC=500 mA, IB= 50mA 1 V
VBE(sat)1 IC=150 mA, IB=15mA 0.6 1.2 V
Base-emitter saturation voltage
VBE(sat)2 IC=500 mA, IB= 50mA 2 V
VCE=20V, IC= 20mA
Transition frequency fT 300 MHz
f=100MHz
VCB=10V, IE= 0
Output Capacitance Cob 8 pF
f=1MHz
VEB=0.5V, IC= 0
Input Capacitance Cib 25 pF
f=1MHz
VCE=10V, IC=100A
Noise Figure NF 4 dB
f=1KHz,Rs=1K
Delay time td VCC=30V, IC=150mA
10 nS
Rise time tr VBE(off)=0.5V,IB1=15mA
25 nS
Storage time tS VCC=30V, IC=150mA
225 nS
Fall time tf 60 nS
IB1= IB2= 15mA
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jan-2006 Rev. B Page 1 of 4
MMDT2222A
NPN Silicon
Elektronische Bauelemente Multi-chip Transistor
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V + 30 V
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