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MMDT3904
NPN Silicon
Elektronische Bauelemente
Multi-Chip Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free SOT-363
* Features
o
.055(1.40) 8
.047(1.20) 0
o
.026TYP
(0.65TYP)
Power dissipation .021REF
(0.525)REF
PCM : 0.2 W (Tamp.= 25 C)
O
.096(2.45) .053(1.35
Collector current .085(2.15) .045(1.15
ICM : 0.2 A .018(0.46)
.010(0.26)
Collector-base voltage C2 B1 E1
.014(0.35)
.006(0.15)
.006(0.15)
.003(0.08)
V(BR)CBO : 60 V .087(2.20)
.079(2.00) .004(0.10)
.000(0.00)
Operating & Storage junction Temperature
.043(1.10) .039(1.00)
Tj, Tstg : -55 C~ +150 C
O O
.035(0.90) .035(0.90)
E2 B2 C1
Marking: K6N or MA Dimensions in inches and (millimeters)
ElECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified)
O
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 10 A IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE= 10A IC=0 5 V
Collector cut-off current ICBO VCB= 30 V , IE=0 0.05 A
Collector cut-off current ICEO VCE= 30 V , IB=0 0.05 A
Emitter cut-off current IEBO VEB= 5V , IC=0 0.05 A
hFE1 VCE= 1V, IC= 10mA 100 300
DC current gain
hFE2 VCE= 1V, IC= 50mA 60
Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB= 5mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC= 50 mA, IB= 5mA 0.95 V
VCE= 20V, IC= 10mA
Transition frequency fT 300 MHz
f=100MHz
VCB=5V, IE= 0
Output Capacitance Cob 4 pF
f=1MHz
Delay time td VCC=3V, VBE=0.5V 35 nS
Rise time tr IC=10mA , IB1=1mA 35 nS
Storage time tS VCC=3V, IC=10mA 200 nS
Fall time tf IB1= IB2= 1mA 50 nS
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
06-May-2010 Rev. C Page 1 of 2
MMDT3904
NPN Silicon
Elektronische Bauelemente
Multi-Chip Transistor
200 15
f = 1MHz
COBO, OUTPUT CAPACITANCE (pF)
PD, POWER DISSIPATION (mW)
CIBO, INPUT CAPACITANCE (pF)
150
10
100
5
Cibo
50
Cobo
0 0
0 25 50 75 100 125 150 175 200 0.1 1 10 100
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