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                                                                                            MMDT4401
                                                                                          NPN Plastic-Encapsulate
                    Elektronische Bauelemente
                                                                                           Multi-Chip Transistor
                                                           RoHS Compliant Product
                                                                                                                    SOT-363


   * Features                                                                                      .055(1.40)                        8
                                                                                                                                      o

                                                                                                   .047(1.20)                        0
                                                                                                                                       o
                                                                                                                     .026TYP
                                                                                                                    (0.65TYP)
                                                                                                                        .021REF
       Power Dissipation.                                                                                              (0.525)REF


               PCM     : 0.2 W (Temp.=25 C)
                                           O
                                                                                                                    .096(2.45)                    .053(1.35)
                                                                                                                    .085(2.15)                    .045(1.15)

       Collector Current
                                                                                                                      .018(0.46)
                                                                                                                      .010(0.26)
               ICM    : 0.6 A                                                                          .014(0.35)                   .006(0.15)
                                                                       C2     B1     E1                .006(0.15)                   .003(0.08)
      Collector-Base vVoltage                                                                      .087(2.20)
                                                                                                   .079(2.00)                              .004(0.10)
                                                                                                                                           .000(0.00)
               V(BR) CBO : 60 V
                                                                                                 .043(1.10)                          .039(1.00)
                                                                                                 .035(0.90)                          .035(0.90)
      Operating & Storage Junction Temperature                         E2     B2     C1


                                                                   Marking : K2X
               Tj,T stg : -55 C ~ +150 C
                             O       O
                                                                                                     Dimensions in inches and (millimeters)

  ELECTRICAL CHARACTERISTICS                   Tamb=25          unless otherwise specified

                 Parameter                     Symbol          Test     conditions                       MIN          TYP           MAX            UNIT

   Collector-base breakdown voltage            V(BR)CBO     Ic=100

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