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MMDT5401
Plastic-Encapsulate
Elektronische Bauelemente
Multi-Chip (PNP+PNP) Transistor
RoHS Compliant Product
SOT-363
o
.055(1.40) 8
Features
.047(1.20) 0
o
.026TYP
(0.65TYP)
.021REF
(0.525)REF
* Epitaxial Planar Die Construction
* Complementary NPN Type Available (MMDT5551) .096(2.45) .053(1.35)
.085(2.15) .045(1.15)
.018(0.46)
C2 B1 E1 .010(0.26)
.014(0.35) .006(0.15)
.006(0.15) .003(0.08)
.087(2.20)
.079(2.00) .004(0.10)
.000(0.00)
E2 B2 C1
.043(1.10) .039(1.00)
.035(0.90) .035(0.90)
Marking : K4M
Dimensions in inches and (millimeters)
Absolute Maximum Ratings (Tamb=25 C unless other wise specified)
o
Parameter Symbol Ratings Unit
Collector-Base Voltage VCBO -160 V
Collector-Emitter Voltage VCEO -150 V
Emitter-Base Voltage VEBO -5 V
Collector Current-Continuous IC -0.2 A
Collector Dissipation PC 0.2 W
o
Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C
ELECTRICAL CHARACTERISTICS (Tamb=25oC unless other wise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo