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                                                                                       MPSA13 / 14
                                                                                NPN Epitaxial Silicon Transistor

                                                         RoHS Compliant Product
                                              A suffix of "-C" specifies halogen & lead-free
                                                                                                                   TO-92

     FEATURES

      Darlington TRANSISTOR


      Power dissipation                                                                 1
                                                                                            2
                                                                                                3

                     PCM:             0.625   W (Tamb=25)                                                                        1 2 3


      Collector current
                                                                                                                                1. EMITTER
               ICM:           0.5       A
                                                                                                                                2. BASE
      Collector-base voltage                                                                                                    3 . COLLECTOR

               V(BR)CBO:      30        V
      Operating and storage junction temperature range

                     TJ, Tstg: -55 to +150

     ELECTRICAL CHARACTERISTICS (Tamb=25                               unless otherwise specified)

                 Parameter                       Symbol               Test     conditions                       MIN              MAX             UNIT

      Collector-base breakdown voltage          V(BR)CBO                Ic= 100

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