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SMG2359P
-1.6 A, -60 V, RDS(ON) 0.381
Elektronische Bauelemente P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
SC-59
DESCRIPTION
The miniature surface mount MOSFETs utilize a high cell density trench process
To provide low RDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers, A
PCMCIA cards, cellular and cordless telephones. 3
L
3
Top View C B
1
FEATURES K
1
E
2
2
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SC-59 saves board D
space. F G H J
Fast switching speed.
High performance trench technology.
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 2.70 3.10 G 0.10 REF.
PRODUCT SUMMARY B 2.25 3.00 H 0.40 REF.
C 1.30 1.70 J 0.10 0.20
PRODUCT SUMMARY D
E
1.00
1.70
1.40
2.30
K
L
0.45
0.85
0.55
1.15
VDS(V) RDS(on) ( ID(A) F 0.35 0.50
0.381@VGS= -10V -1.6 Drain
-60
0.561@VGS= -4.5V -1.3
Gate
Source
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