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SDN520C
N-Ch: 4.5 A, 20 V, RDS(ON) 58 m
P-Ch: -4.5 A, -20 V, RDS(ON) 112 m
Elektronische Bauelemente N & P-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of "-C" specifies halogen and lead-free
DESCRIPTION DFN2x2-6L
These miniature surface mount MOSFETs utilize a
high cell Density trench process to provide low RDS(on)
and to assures minimal power loss and heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe DFN2X2_6L
saves board space.
Fast switching speed.
High performance trench technology.
Millimeter Millimeter
APPLICATION REF.
Min. Typ. Max.
REF.
Min. Typ. Max.
A 2.00 BSC. G 0.23 0.30 0.38
DC-DC converters and power management B 2.00 BSC. H 0.65BSC
in portable and battery-powered products such C 0.675 0.75 0.80 J 0 -
- 0.05
as computers, printers, PCMCIA cards, cellular D 0.25 0.30 0.35 K 0.15 0.20 0.25
E 0.81 0.86 0.91 L 0.25 0.30 0.35
and cordless telephones. F 0.65BSC P 0.60 0.65 0.70
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