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SS8050T
NPN Silicon
Elektronische Bauelemente General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURES TO-92
Power dissipation
PCM : 1 W
Collector Current
ICM : 1.5 A
1
Collector-base voltage 2
3
V(BR)CBO : 40 V
1 2 3
Operating & storage junction temperature 1
O O
Tj, Tstg : - 55 C ~ + 150 C
1. EMITTER
2
2. BASS
3 . COLLECTOR
3
O
ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100 A IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100 A IC=0 5 V
Collector cut-off current ICBO VCB=40 V , IE=0 0.1 A
Collector cut-off current ICEO VCE=20V , IB=0 0.1 A
Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 A
HFE(1) VCE=1V, IC= 100m A 85 400
DC current gain
HFE(2) VCE=1V, IC= 800mA 40
Collector-emitter saturation voltage VCE(sat) IC=800 mA, IB= 80m A 0.5 V
Base-emitter saturation voltage VBE(sat) IC=800 mA, IB= 80m A 1.2 V
VCE=10V, IC= 50mA
Transition frequency fT 100 MHz
f=30MHz
CLASSIFICATION OF h FE(1)
Rank B C D E
Range 85-160 120-200 160-300 300-400
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page 1 of 2
SS8050T
NPN Silicon
Elektronische Bauelemente General Purpose Transistor
Typical Characteristics
0.5 1000
VCE = 1V
IB = 3.0mA
IC[mA], COLLECTOR CURRENT
0.4
hFE, DC CURRENT GAIN
IB = 2.5mA
100
0.3 IB = 2.0mA
IB = 1.5mA
0.2
10
IB = 1.0mA
0.1
IB = 0.5mA
1
0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
10000 100
IC = 10 IB VCE = 1V
IC[mA], COLLECTOR CURRENT
VBE(sat)
1000 10
100 1
VCE(sat)
10 0.1
0.1 1 10 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2
IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
1000 1000
CURRENT GAIN BANDWIDTH PRODUCT
IE = 0 VCE = 10V
f = 1MHz
Cob [pF], CAPACITANCE
100 100
fT[MHz],
10 10
1 1
1 10 100 1 10 100 400
VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page 2 of 2
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