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SS8050W
NPN Silicon
Elektronische Bauelemente General Purpose Transistor
RoHS Compliant Product
SOT-323
FEATURES Collector
3 Dim Min Max
3
A 1.800 2.200
Power dissipation 1 1 B 1.150 1.350
PCM : 0.2 W 2 Base C 0.800 1.000
Collector Current D 0.300 0.400
ICM : 1.5 A A 2 G 1.200 1.400
Emitter
L
Collector-base voltage H 0.000 0.100
V(BR)CBO : 40 V 3 J 0.100 0.250
Top View B S K 0.350 0.500
Operating & storage junction temperature 1 2
O O L 0.590 0.720
Tj, Tstg : - 55 C ~ + 150 C
V G S 2.000 2.400
V 0.280 0.420
C All Dimension in mm
D H J
K
O
ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100 A IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100 A IC=0 5 V
Collector cut-off current ICBO VCB=40 V , IE=0 0.1 A
Collector cut-off current ICEO VCE=20V , IB=0 0.1 A
Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 A
HFE(1) VCE=1V, IC= 50m A 120 350
DC current gain
HFE(2) VCE=1V, IC=500mA 40
Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50m A 0.5 V
Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50m A 1.2 V
VCE=6V, I = 20mA
C
Transition frequency fT 100 MHz
f=30MHz
CLASSIFICATION OF h FE(1)
Rank L H
Range 120-200 200-350
Marking : Y1
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page 1 of 2
SS8050W
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page 2 of 2
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