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SSD30N03-40D
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente 34A, 30V, RDS(ON) 26m
RoHS Compliant Product
A suffix of "-C" specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high TO-252(D-Pack)
cell density trench process to provide Low RDS(on) and to
ensure minimal power loss and heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe DPAK saves board space.
Fast switching speed. A
High performance trench technology. B C
D
APPLICATION
DC-DC converters and power management in GE
portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
K HF N
O
2 P
PACKAGE INFORMATION Drain M J
Millimeter Millimeter
Package MPQ Leader Size REF.
Min. Max.
REF.
Min. Max.
1 A 6.4 6.8 J 2.30 REF.
TO-252 2.5K 13 inch Gate B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
3 G 5.40 6.2
Source H 0.8 1.20
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