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SSG4490N
5.2 A, 100 V, RDS(ON) 78 m
Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET
DESCRIPTION
These miniature surface mount MOSFETs SOP-8
utilize a high cell density trench process to
provide low RDS(on) and to ensure minimal
power loss and heat dissipation. Typical B
applications are DC-DC converters and power
management In portable and battery-powered
products such as computers, printers, PCMCIA L D
cards, cellular and cordless telephones. M
A C
FEATURES N
Low RDS(on) provides higher efficiency and J K
extends battery life. H G F E
Low thermal impedance copper leadframe
SOIC-8 saves board space.
Millimeter Millimeter
Fast switching speed. REF.
Min. Max.
REF.
Min. Max.
A 5.80 6.20 H 0.35 0.49
High performance trench technology. B 4.80 5.00 J 0.375 REF.
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