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SSG4512CE
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.9 A, 30 V, RDS(ON) 31 m
Elektronische Bauelemente P-Ch: -5.2 A, -30 V, RDS(ON) 52 m
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
DESCRIPTION SOP-8
These miniature surface mount MOSFETs utilize a
B
high cell density trench process to provide low RDS(on)
and to ensure minimal power loss and heat dissipation.
L D
FEATURES
M
Low RDS(on) provides higher efficiency and
extends battery life.
A C
Low thermal impedance copper leadframe
N
SOP-8 saves board space.
Fast Switch Speed. J K
High performance trench technology. H G F E
Millimeter Millimeter
APPLICATION REF.
Min. Max.
REF.
Min. Max.
A 5.80 6.20 H 0.35 0.49
DC-DC converters and power management in portable B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo