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SSRF4N60
4A , 600 V , RDS(ON) 2.4
Elektronische Bauelemente N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of "-C" specifies halogen and lead-free
DESCRIPTION
The N-Channel MOSFET is used an advanced termination ITO-220
scheme to provide enhanced voltage-blocking capability without
degrading performance over time. This advanced technology has B N
been especially tailored to minimize on-state resistance, provide
D
superior switching performance. This device is well suited for high E
efficiency switched mode power suppliers, active power factor
correction, electronic lamp ballasts based half bridge topology.
M A
FEATURES
Robust high voltage termination
Avalanche energy specified H J C
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
discrete fast recovery diode. 2 K G
Drain L L F
Millimeter Millimeter
1 REF.
Min. Max.
REF.
Min. Max.
Gate A 14.60 15.70 H 2.70 3.80
B 9.50 10.50 J 0.90 1.50
C 12.60 14.00 K 0.50 0.90
D 4.30 4.70 L 2.34 2.74
E 2.30 3.2 M 2.40 3.00
3 F 2.30 2.80 N 3.0 3.4
Source G 0.30 0.70
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