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SSRF60N10
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente 51A, 100V, RDS(ON) 78m
RoHS Compliant Product
A suffix of "-C" specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench ITO-220
process to provide Low RDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC converters and power management B N
in portable and battery-powered products such as computers, printers, PCMCIA
D
cards, cellular and cordless telephones. E
M A
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe ITO-220 saves board
space. H J C
Fast switching speed.
High performance trench technology. K G
L L F
PRODUCT SUMMARY Dimensions in millimeters
PRODUCT SUMMARY
VDS(V) RDS(on) m( ID(A)
REF.
Millimeter
REF.
Millimeter
78@VGS= 10V a Drain
Min. Max. Min. Max.
100 51 A 15.00 15.60 H 3.00 3.80
92@VGS= 4.5V B
C
9.50 10.50
13.00 Min
J
K
0.90
0.50
1.50
0.90
D 4.30 4.70 L 2.34 2.74
E 2.50 3.10 M 2.50 2.90
Gate F 2.40 2.80 N 3.1 3.4
G 0.30 0.70
Source
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