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N-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente 2.3 A, 60 V, RDS(ON) 0.153
RoHS Compliant Product
A suffix of "-C" specifies halogen and lead-free
DESCRIPTION TSOP-6
These miniature surface mount MOSFETs utilize High Cell Density A
process. Low RDS(on) assures minimal power loss and conserves E
L
energy, making this device ideal for use in power management 6 5 4
circuitry. Typical applications are DC-DC converters, power
management in portable and battery-powered products such as
B
computers, printers, PCMCIA cards, cellular and cordless telephones.
FEATURES F
1 2 3
C H
Low RDS(on) provides higher efficiency and extends battery life. DG K J
Miniature TSOP-6 surface mount package saves board space.
PRODUCT SUMMARY
Millimeter Millimeter
REF. REF.
PRODUCT SUMMARY A
Min.
2.70
Max.
3.10 G
Min.
0
Max.
0.10
VDS(V) RDS(on) ( ID(A) B
C
2.60
1.40
3.00
1.80
H
J
0.60 REF.
0.12 REF.
0.153@VGS= 10V 2.3 D 1.10 MAX. K 0
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