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pzt195


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                                                                                                         PZT195
                                                                                             PNP Silicon Planar
                     Elektronische Bauelemente                                            Medium Power Transistor
                                                          RoHS Compliant Product


    Features
    * -60 Voltage VCEO.                                                                                            SOT-223
    * 1 Amps continuous current.
    * Complementary to PZT194



     Mechanical Data                                  C

     Case: SOT-223 Plastic Package
     Weight: approx. 0.021g                                                          E
                                                                                                            1         2        3
                                                                             C
     Marking Code: 195                                                   B
                                                                                                             1.    BASE
                                                                                                             2.    COLLECTOR

     Maximum Ratings and Thermal Characteristics                                                             3.    EMITTER
               O
     (TA = 25 C unless otherwise noted)
     Parameter                                                           Symbol                            Value                            Unit
                                                                                              -
                                                                                                                                                C
                                                                                                                                            O
     Junction Temperature                                                     Tj                           +150
                                                                                                                                                C
                                                                                                                                            O
     Storage Temperature                                                     Tstg                        -55 to +150
     Collector-Base Voltage                                                  VCBO                            -80                             V
     Collector-Emitter Voltage                                               VCEO                            -60                                V
     Emitter-Base Voltage                                                    V EBO                            -5                                V
     Collector Current (DC)                                                   IC                              -1                                A
     Collector Current (Pulse)                                                IC                             -0.2                               A
     Total Power Dissipation                                                 PD                               2.0                            W

    Notes: Device on alumina substrate.

    Electrical Characteristics (TJ = 25 C  O
                                               unless otherwise noted)


                              Parameter           Symbol          Min        Typ. Max             Unit               Test Conditions
     Collector-Base Breakdown Voltage            BVCBO             -80           -        -        V     IC=-100uA, IE=0

     Collector-Emitter Breakdown Voltage         *BVCEO            -60           -        -        V     IC=-10mA, IB=0

     Emitter-Base Breakdown Voltage              BVEBO              -5           -        -        V     IE=-100uA, IC=0

     Collector-Emmiter Breakdown Voltage         ICBO                -           -       -100     nA     VCB=-60V, IE=0

     Collector-Base Cutoff Current               ICES                -           -       -100     nA     VCES=-60V

     Emitter-Base Cutoff Current                 IEBO                -           -       -100     nA     VEB=-4V, IC=0

     Collector Saturation Voltage 1              *VCE(sat)1          -           -       -0.3      V     IC=-500mA, IB=-50mA

     Collector Saturation Voltage 2              *VCE(sat)2          -           -       -0.6      V     IC=-1A, IB=-100mA

     Base Saturation Voltage                     *VBE(sat)           -           -       -1.2      V     IC=-1A, IB=-100mA

     Base-Emitter Voltage                        *VBE(on)            -           -       -1.0      V     VCE=-5V, IC=-1A

     DC Current Gain 1                           *hFE1             100           -        -        -     VCE=-5V, IC=1mA

     DC Current Gain 2                           *hFE2             100           -       300       -     VCE=-5V, IC=-500mA

     DC Current Gain 3                           *hFE3              80           -        -        -     VCE=-5V, IC=-1A

     DC Current Gain 4                           *hFE4              15           -        -        -     VCE=-5V, IC=-2A

     Gain-Bandwidth Product                      fT                150           -        -       MHz    VCE=-10V, IC=-50mA, f=100MHz

     Output Capacitance                          Cob                 -           -       10       pF     VCB=-10V, IE=0, f=1MHz

  http://www.SeCoSGmbH.com                                                                               Any changing of specification will not be informed individual
01-Jun-2002 Rev. A                                                                                                                                        Page 1 of 2
                                                       PZT195
                                                   PNP Silicon Planar
                     Elektronische Bauelemente
                                                 Medium Power Transistor


          Characteristics Curve




 http://www.SeCoSGmbH.com                             Any changing of specification will not be informed individual

01-Jun-2002 Rev. A                                                                                       Page 2 of 2



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