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                                                                                                       PZT559
                                                                                                 PNP Silicon Planar
                  Elektronische Bauelemente
                                                                                               High Current Transistor
                                                                RoHS Compliant Product
                                                                                                            SOT-223
    Description
    The PZT559 is designed for general
    purpose switching and amplifier
    applications.


    Features
   * Excellent Gain Characteristic Specified
     Up To 3 Amps.
                                                                                                           Millimeter                       Millimeter
                                                                                                 REF.                          REF.




                                                      De
                                                      ad
                                                      tC
                                                      eo
    * 4 Amps Continuous Current, Up To                                                                    Min.    Max.                     Min.     Max.
      10 Amps Peak Current                                                                         A      6.70    7.30            B              C
                                                                                                                                              13 T YP.
                                                                                                   C      2.90    3.10            J          2.30 REF.




                                                        BE
                                                         C
    * Very Low Saturation Voltages                              5 5 9                              D      0.02    0.10            1        6.30     6.70
                                                                                                   E       0C      10 C           2        6.30     6.70
                                                                                                   I      0.60    0.80            3        3.30     3.70
                                                                                                   H      0.25    0.35            4        3.30     3.70
                                               o
                                                                                                                                  5        1.40     1.80
     MAXIMUM RATINGS* (Tamb =25 C, unless otherwise specified)
          Symbol                                         Parameter                                           Value                        Units
           VCBO              Collector-Base Voltage                                                          -180                           V
           VCEO              Collector-Emitter Voltage                                                       -140                           V
           VEBO              Emitter-Base Voltage                                                             -6                            V
            IC               Collector Current (DC)                                                           -4                            A
           I CM              Collector Current (Pulse)                                                       -10                            A
           PD                Total Power Dissipation                                                            3                          W
          TJ,Tstg            Junction and Storage Temperature                                             -55~+150                          C
                                                                                                                                           O




       *The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min..
                                                            o
     ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
                  Parameter
      Collector-Base Breakdown Voltage
      Collector-Base Breakdown Voltage
                                             Symbol
                                             BVCBO
                                             BVCER
                                                          Min
                                                         -180
                                                         -180
                                                                    Typ.
                                                                      -
                                                                      -
                                                                             Max
                                                                              -
                                                                              -
                                                                                      Unit
                                                                                       V
                                                                                       V
                                                                                               Test Conditions
                                                                                               I C=-100

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