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                                                                                                     PZT6718
                                                                                                   NPN Transistor
                   Elektronische Bauelemente
                                                                                              Epitaxial Planar Transistor
                                                                    RoHS Compliant Product
                                                                                                             SOT-223


   Description

   The PZT6718 is designed for general
   purpose medium power amplifier and
   switching.

                                                                                                             Millimeter                       Millimeter
                                                                                                   REF.                         REF.
                                                                                                           Min.     Max.                    Min.     Max.
                                                                                                    A      6.70     7.30           B           13 T YP.
                                                                                                                                                   C
                                                                                                    C      2.90     3.10           J          2.30 REF.
                                                                    6 7 18                          D      0.02     0.10           1        6.30     6.70
                                                   Date Code
                                                                                                    E       0C       10 C          2        6.30     6.70
                                                                                                    I      0.60     0.80           3        3.30     3.70
                                                                    B    C       E                  H      0.25     0.35           4        3.30     3.70
                                                                                                                                   5        1.40     1.80


                                                                o
     ABSOLUTE MAXIMUM RATINGS                          Ta=25 C
           Symbol                                        Parameter                                            Value                        Units
            VCBO             Collector-Base Voltage                                                            100                           V
            VCEO             Collector-Emitter Voltage                                                         100                           V
            VEBO             Emitter-Base Voltage                                                                5                           V
             IC              Collector Current                                                                   1                           A
            PD               Total Power Dissipation                                                            1.5                          W
           TJ,Tstg           Junction and Storage Temperature                                               -55~+150                         C
                                                                                                                                             O




                                                               o
      ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
                   Parameter                 Symbol            Min      Typ.         Max   Unit   Test Conditions
       Collector-Base Breakdown Voltage      BVCBO         100           -            -     V     I C= 100

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