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PZT772
PNP Transistor
Elektronische Bauelemente
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
Description
The PZT772 is designed for using
in output stage of 2W amplifier,
voltage regulator, DC-DC converter
and driver.
REF. REF.
Min. Max. Min. Max.
A 6.70 7.30 B 13 T YP.
C
C 2.90 3.10 J 2.30 REF.
7 7 2 D 0.02 0.10 1 6.30 6.70
Date Code
E 0C 10 C 2 6.30 6.70
I 0.60 0.80 3 3.30 3.70
B C E H 0.25 0.35 4 3.30 3.70
o 5 1.40 1.80
MAXIMUM RATINGS* (Tamb =25 C , unless otherwise specified)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current-Continuous -3 A
PD Total Power Dissipation 1.5 W
TJ,Tstg Junction and Storage Temperature -55~-150
O
C
ELECTRICAL CHARACTERISTICS Tamb=25 unlessotherwise specified
Parameter Symbol MIN TYP MAX UNIT Test conditions
Collector-base breakdown voltage _ _ V Ic=-100u A
V(BR)CBO -40
_ _ V
Collector-emitter breakdown voltage V(BR)CEO -30 IC= -10 mA
Emitter-base breakdown voltage _ _
V(BR)EBO -5 V IE= -10u A
ICBO _ _ uA
Collector cut-off current -1 VCB= -30 V
Emitter cut-off current IEBO _ _ 1 uA VEB=-3V
_ _ _
hFE 1 30 VCE= -2V, IC= -20mA
DC current gain
hFE 2 100 160 500 _ VCE=-2V, IC= -1mA
Collector-emitter saturation voltage _ -0.3 -0.5 V I C=-2A, IB= -0.2A
VCE(sat)
_ -2 V
Base-emitter saturation voltage VBE(sat) -1 I C=-2A, IB= -0.2A
_ _ VCE=-20V,IC=-20mA ,
Transition frequency fT 80 MHz
f = 100MHz
_ _
Collector output capacitance Cob 55 pF VCB=-10V, f=1MHz
CLASSIFICATION OF hFE2
Rank Q P E
Range 100-200 160-320 250-500
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page 1 of 2
PZT772
PNP Transistor
Elektronische Bauelemente
Epitaxial Planar Transistor
RATING AND CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page 2 of 2
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