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                                                                                                         PZTA14
                                                                                                   NPN Transistor
                   Elektronische Bauelemente
                                                                                              Epitaxial Planar Transistor
                                                                     RoHS Compliant Product



                                                                                                            SOT-223


       Description

       The PZTA14 is darlington amplifier
       transistor designed for applications
       requiring extremely high current gain.



                                                                                                         Millimeter                    Millimeter
                                                                                              REF.                        REF.
                                                                                                       Min.     Max.                 Min.     Max.
                                                                                                  A    6.70     7.30         B          13 T YP.
                                                                                                                                            C
                            A 1 4
            Date Code                                                                             C    2.90     3.10         J         2.30 REF.
                                                                                                  D    0.02     0.10         1       6.30     6.70
                                                                                                  E     0C       10 C        2       6.30     6.70
                            B     C     E                                                         I    0.60     0.80         3       3.30     3.70
                                                                                                  H    0.25     0.35         4       3.30     3.70
                                                                                                                             5       1.40     1.80




                                                                 o
      ABSOLUTE MAXIMUM RATINGS                              Ta=25 C
           Symbol                                             Parameter                                           Value                        Units
            VCBO                Collector-Base Voltage                                                              30                            V
            VCEO                Collector-Emitter Voltage                                                            30                         V
            VEBO                Emitter-Base Voltage                                                                 10                         V
             IC                 Collector Current                                                                   300                         mA
            PD                  Total Power Dissipation                                                               2                          W
           TJ,Tstg              Junction and Storage Temperature                                                -55~+150                          C
                                                                                                                                                 O




                                                                 o
      ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
                   Parameter                    Symbol          Min       Typ.    Max     Unit        Test Conditions
       Collector-Base Breakdown Voltage         BVCBO           30         -       -       V          I C= 100

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