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S9013
NPN Silicon
Elektronische Bauelemente General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
SOT-23
FEATURES Collector Dim Min Max
3 3
A 2.800 3.040
Power dissipation 1 B 1.200 1.400
1
PCM : 0.3 W 2 Base C 0.890 1.110
Collector Current D 0.370 0.500
2 G 1.780 2.040
ICM : 0.5 A A
Emitter
L H 0.013 0.100
Collector-base voltage
J 0.085 0.177
V(BR)CBO : 40 V 3
K 0.450 0.600
Top View B S
Operating & storage junction temperature 1 2 L 0.890 1.020
Tj, Tstg : - 55 C ~ + 150 C
O O
S 2.100 2.500
V G
V 0.450 0.600
All Dimension in mm
C
D H J
K
ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified)O
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100 A IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100 A IC=0 5 V
Collector cut-off current ICBO VCB=40 V , IE=0 0.1 A
Collector cut-off current ICEO VCE=20V , IB=0 0.1 A
Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 A
HFE(1) VCE=1V, IC= 50m A 120 350
DC current gain
HFE(2) VCE=1V, IC=500mA 40
Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50m A 0.6 V
Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50m A 1.2 V
VCE=6V, I = 20mA
C
Transition frequency fT 150 MHz
f=30MHz
CLASSIFICATION OF h FE(1)
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2005 Rev.B Page 1 of 1
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