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NPN Silicon
Elektronische Bauelemente Pre-Amplifier, Low Level & Low Noise
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
SOT-23
FEATURES Collector Dim Min Max
3 3
A 2.800 3.040
Power dissipation 1 1
B 1.200 1.400
PCM : 0.2 W 2 Base C 0.890 1.110
Collector Current D 0.370 0.500
G 1.780 2.040
ICM : 0.1 A A 2
Emitter H 0.013 0.100
L
Collector-base voltage
J 0.085 0.177
V(BR)CBO : 50 V 3
K 0.450 0.600
Top View B S
Operating & storage junction temperature 1 2 L 0.890 1.020
Tj, Tstg : - 55 C ~ + 150 C
O O
S 2.100 2.500
V G
V 0.450 0.600
All Dimension in mm
C
D H J
K
ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) O
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100A IE=0 50 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA IB=0 45 V
Emitter-base breakdown voltage V(BR)EBO IE=100A IC=0 5 V
Collector cut-off current ICBO VCB=50 V , IE=0 0.1 A
Collector cut-off current ICEO VCE=35V , IB=0 0.1 A
Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 A
DC current gain hFE VCE=5V, IC= 1mA 200 1000
Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB= 5mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=100 mA, IB= 5mA 1 V
VCE=5V, IC= 10mA
Transition frequency fT 150 MHz
f=30MHz
CLASSIFICATION OF hFE(1)
Rank L H
Range 200-450 450-1000
DEVICE MARKING: S9014 =J6
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2004 Rev. B Page 1 of 2
S9014
NPN Silicon
Elektronische Bauelemente Low Frequency, Low Noise Amplifier
Typical Characteristics
100
1000
90 VCE = 5V
IB = 160
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