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2n7007


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                                                                                                                                         2N7007

                                                      N-Channel Enhancement-Mode
                                                      Vertical DMOS FET
Ordering Information
     BVDSS /              RDS(ON)                ID(ON)           Order Number / Package
     BVDGS                (max)                  (min)                      TO-92
      240V                 45                    150mA                  2N7007




Features                                                                            Advanced DMOS Technology
s Free from secondary breakdown                                                     These enhancement-mode (normally-off) transistors utilize a
                                                                                    vertical DMOS structure and Supertex's well-proven silicon-gate
s Low power drive requirement
                                                                                    manufacturing process. This combination produces devices with
s Ease of paralleling                                                               the power handling capabilities of bipolar transistors and with the
                                                                                    high input impedance and positive temperature coefficient inher-
s Low CISS and fast switching speeds
                                                                                    ent in MOS devices. Characteristic of all MOS structures, these
s Excellent thermal stability                                                       devices are free from thermal runaway and thermally-induced
s Integral Source-Drain diode                                                       secondary breakdown.

s High input impedance and high gain                                                Supertex's vertical DMOS FETs are ideally suited to a wide range
                                                                                    of switching and amplifying applications where high breakdown
s Complementary N- and P-channel devices                                            voltage, high input impedance, low input capacitance, and fast
                                                                                    switching speeds are desired.


Applications
s Motor controls
s Converters
                                                                                    Package Options
s Amplifiers
s Switches
s Power supply circuits
s Drivers (relays, hammers, solenoids, lamps,
  memories, displays, bipolar transistors, etc.)




Absolute Maximum Ratings
Drain-to-Source Voltage                                            BVDSS
                                                                                                                      SGD
Drain-to-Gate Voltage                                              BVDGS                                            TO-92
Gate-to-Source Voltage                                              



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