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Supertex inc.                                                                                                                                      TN0104
                                                     N-Channel Enhancement-Mode
                                                     Vertical DMOS FET
Features                                                                           General Description
     Low threshold (1.6V max.)                                                     This low threshold, enhancement-mode (normally-off) transistor
     High input impedance                                                          utilizes a vertical DMOS structure and Supertex's well-proven,
     Low input capacitance                                                         silicon-gate manufacturing process. This combination produces a
     Fast switching speeds                                                         device with the power handling capabilities of bipolar transistors
     Low on-resistance                                                             and with the high input impedance and positive temperature
                                                                                   coefficient inherent in MOS devices. Characteristic of all MOS
     Free from secondary breakdown
                                                                                   structures, this device is free from thermal runaway and thermally-
     Low input and output leakage
                                                                                   induced secondary breakdown.
Applications
                                                                                   Supertex's vertical DMOS FETs are ideally suited to a wide range
     Logic level interfaces 

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