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Supertex inc.                                                                                                                                     TN0106

                                                    N-Channel Enhancement-Mode
                                                    Vertical DMOS FET
Features                                                                             General Description
     Low threshold - 2.0V max.                                                       This low threshold, enhancement-mode (normally-off) transistor
     High input impedance                                                            utilizes a vertical DMOS structure and Supertex's well-proven,
     Low input capacitance - 50pF typical                                            silicon-gate manufacturing process. This combination produces
     Fast switching speeds                                                           a device with the power handling capabilities of bipolar transistors
     Low on-resistance                                                               and the high input impedance and positive temperature coefficient
                                                                                     inherent in MOS devices. Characteristic of all MOS structures,
     Free from secondary breakdown
                                                                                     this device is free from thermal runaway and thermally-induced
     Low input and output leakage
                                                                                     secondary breakdown.

Applications                                                                         Supertex's vertical DMOS FETs are ideally suited to a wide range
     Logic level interfaces 

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