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                                                                                                                                                TC6215
                                               N- and P-Channel
                                        Enhancement-Mode Dual MOSFET
Features                                                                General Description
       Back to back gate-source Zener diodes
                                                                        The Supertex TC6215 consists of high voltage, low threshold N-channel
       Guaranteed RDS(ON) at 4.0V gate drive
                                                                        and P-channel MOSFETs in an 8-Lead SOIC (TG) package. Both
       Low threshold
                                                                        MOSFETs have integrated back to back gate-source Zener diode clamps
       Low on-resistance
                                                                        and guaranteed RDS(ON) ratings down to 4.0V gate drive allowing them to
       Independent N- and P-channels
                                                                        be driven directly with standard 5.0V CMOS logic.
       Electrically isolated N- and P-channels
       Low input capacitance
                                                                        These low threshold enhancement-mode (normally-off) transistors utilize
       Fast switching speeds
                                                                        an advanced vertical DMOS structure and Supertex's well-proven silicon-
       Free from secondary breakdowns
                                                                        gate manufacturing process. This combination produces devices with the
       Low input and output leakage
                                                                        power handling capabilities of bipolar transistors and with the high input
Applications                                                            impedance and positive temperature coefficient inherent in MOS devices.
                                                                        Characteristic of all MOS structures, these devices are free from thermal
       High voltage pulsers
                                                                        runaway and thermally-induced secondary breakdown.
       Amplifiers
       Buffers
                                                                        Supertex's vertical DMOS FETs are ideally suited to a wide range of
       Piezoelectric transducer drivers
                                                                        switching and amplifying applications where very low threshold voltage,
       General purpose line drivers
                                                                        high breakdown voltage, high input impedance, low input capacitance,
       Logic level interfaces
                                                                        and fast switching speeds are desired.


Ordering Information
                      Package Option                          BVDSS/BVDGS                          RDS(ON)   (Max)

     Device             8-Lead SOIC
                      4.90x3.90mm body              N-Channel            P-Channel         N-Channel         P-Channel
                     1.75mm height (max)                   (V)                  (V)             ()                ()
                         1.27mm pitch

     TC6215             TC6215TG-G                        150                 -150              4.0               7.0
-G indicates package is RoHS compliant (`Green')


Absolute Maximum Ratings                                                                  Pin Configuration
                                                                                                                        DP
    Parameter                                                               Value                                  DP
                                                                                                                 DN
    Drain-to-source voltage                                                  BVDSS                             DN

    Drain-to-gate voltage                                                    BVDGS                                                         GP
                                                                                                                                      SP
    Gate-to-source voltage                                                   

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