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                                                                                                                                             TC1550
                                               N- and P-Channel
                                        Enhancement-Mode Dual MOSFET
Features                                                                           General Description
       500V breakdown voltage                                                      The Supertex TC1550 consists of a high voltage N-channel and
       Independent N- and P-channels                                               P-channel MOSFET in an 8-Lead SOIC package. This is an
       Electrically isolated N- and P-channels                                     enhancement-mode (normally-off) transistor utilizing an advanced
       Low input capacitance                                                       vertical DMOS structure and Supertex's well-proven silicon-gate
       Fast switching speeds                                                       manufacturing process. This combination produces a device with
       Free from secondary breakdowns                                              the power handling capabilities of bipolar transistors and with the
       Low input and output leakage                                                high input impedance and positive temperature coefficient inherent
                                                                                   in MOS devices. Characteristic of all MOS structures, this device
Applications                                                                       is free from thermal runaway and thermally induced secondary
                                                                                   breakdown.
       High voltage pulsers
       Amplifiers
                                                                                   Supertex's vertical DMOS FETs are ideally suited to a wide range
       Buffers
                                                                                   of switching and amplifying applications where very low threshold
       Piezoelectric transducer drivers
                                                                                   voltage, high breakdown voltage, high input impedance, low input
       General purpose line drivers
                                                                                   capacitance, and fast switching speeds are desired.


Ordering Information
                                                                                                                                  RDS(ON)
                           Package Option                                     BVDSS/BVDGS
                                                                                                                                  (Max)

       Device                 8-Lead SOIC
                            4.90x3.90mm body                    N-Channel                 P-Channel             N-Channel                   P-Channel
                           1.75mm height (max)                        (V)                      (V)                    ()                       ()
                               1.27mm pitch

       TC1550                 TC1550TG-G                             500                      -500                    60                      125
-G indicates package is RoHS compliant (`Green')

                                                                                          Pin Configuration
                                                                                                                     DP
                                                                                                                DP
                                                                                                              DN
                                                                                                            DN

                                                                                                                                       GP
Absolute Maximum Ratings                                                                                                          SP
                                                                                                                                GN
    Parameter                                                               Value                                          SN

    Drain-to-source voltage                                                  BVDSS                            8-Lead SOIC (TG)
                                                                                                                     (top view)
    Drain-to-gate voltage                                                    BVDGS
    Gate-to-source voltage                                                   

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