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TC2320
N- and P-Channel Enhancement-Mode Dual MOSFET
Features General Description
Low threshold The Supertex TC2320 consists of a high voltage, low
Low on-resistance threshold N- and P-channel MOSFET in an 8-Lead SOIC
Low input capacitance package. This low threshold enhancement-mode (normally-
Fast switching speeds off) transistor utilizes an advanced vertical DMOS structure
and Supertex's well-proven silicon-gate manufacturing
Freedom from secondary breakdown
process. This combination produces a device with the
Low input and output leakage
power handling capabilities of bipolar transistors and
Independent, electrically isolated N- and P-channels
with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
Applications
MOS structures, this device is free from thermal runaway
Medical ultrasound transmitters and thermally-induced secondary breakdown.
High voltage pulsers
Amplifiers Supertex's vertical DMOS FETs are ideally suited to a
Buffers wide range of switching and amplifying applications where
Piezoelectric transducer drivers very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
General purpose line drivers
speeds are desired.
Logic level interface
Ordering Information
BVDSS/BVDGS RDS(ON)
8-Lead SOIC (Narrow Body)
4.90x3.90mm body, (max)
Device (V)
1.75mm height (max) ()
1.27mm pitch N-Channel P-Channel N-Channel P-Channel
TC2320 TC2320TG-G 200 -200 7.0 12
-G indicates package is RoHS compliant (`Green')
Pin Configuration
DP
DP
DN
DN
GP
Absolute Maximum Ratings SP
Parameter Value GN
SN
Drain-to-source voltage BVDSS 8-Lead SOIC (TG)
Drain-to-gate voltage BVDGS
Product Marking
Gate-to-source voltage ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo