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                                                                                                                                                   TP2104

                                                       P-Channel Enhancement Mode
                                                       Vertical DMOS FETs
Features                                                                                     General Description
       High input impedance and high gain                                                    This low threshold enhancement-mode (normally-off)
       Low power drive requirement                                                           transistor utilizes a vertical DMOS structure and Supertex's
       Ease of paralleling                                                                   well-proven silicon-gate manufacturing process. This
       Low CISS and fast switching speeds                                                    combination produces a device with the power handling
       Excellent thermal stability                                                           capabilities of bipolar transistors and with the high input
                                                                                             impedance and positive temperature coefficient inherent
       Integral source-drain diode
                                                                                             in MOS devices. Characteristic of all MOS structures,
       Free from secondary breakdown
                                                                                             this device is free from thermal runaway and thermally-
                                                                                             induced secondary breakdown.
Applications
       Logic level interfaces - ideal for TTL and CMOS                                       Supertex's vertical DMOS FETs are ideally suited to a wide
                                                                                             range of switching and amplifying applications where very
       Solid state relays
                                                                                             low threshold voltage, high breakdown voltage, high input
       Analog switches
                                                                                             impedance, low input capacitance, and fast switching
       Power management
                                                                                             speeds are desired.
       Telecom switches



Ordering Information
                                                   Package Options                                                              RDS(ON)                  VGS(th)
                                                                                                     BVDSS/BVDGS
        Device                                                                                                                  (max)                    (max)
                                TO-236AB (SOT-23)                                TO-92                      (V)
                                                                                                                                 ()                       (V)
        TP2104                         TP2104K1-G                            TP2104N3-G                    -40                   6.0                      -2.0
-G indicates package is RoHS compliant (`Green')

                                                                                             Pin Configuration

                                                                                                                                          DRAIN

                                                                                                                  DRAIN


                                                                                                       SOURCE
                                                                                                                                                            SOURCE

Absolute Maximum Ratings                                                                                                                          GATE
                                                                                                                      GATE
    Parameter                                                                   Value                  TO-92 (N3)                 TO-236AB (SOT-23) (K1)
    Drain-to-source voltage                                                     BVDSS        Product Marking
    Drain-to-gate voltage                                                       BVDGS                  SiTP         YY = Year Sealed
    Gate-to-source voltage                                                      

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