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Midium Power Transistors (-80V / -0.7A)
2SAR514R
Features Dimensions (Unit : mm)
1) Low saturation voltage, typically TSMT3
V CE (sat) = -0.4V (Max.) (I C / I B= -300mA / -15mA)
2) High speed switching
(3)
Structure
PNP Silicon epitaxial planar transistor
(1) (2)
(1) Base
Applications (2) Emitter
(3) Collector Abbreviated symbol : MD
Driver
Packaging specifications Inner circuit
Package TSMT3 (2)
(3)
Type Code TL
Basic ordering unit (pieces) 3000
(1)
Absolute maximum ratings (Ta = 25C)
Parameter Symbol Limits Unit (1) Base
Collector-base voltage VCBO -80 V (2) Emitter
(2)
(3) Collector (3)
Collector-emitter voltage VCEO -80 V
Emitter-base voltage VEBO -6 V
DC IC -0.7 A
Collector current
Pulsed ICP *1 -1.4 A
PD *2 0.5 W
Power dissipation
PD *3 1.0 W
Junction temperature Tj 150 C
Range of storage temperature Tstg -55 to 150 C
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land.
*3 Mounted on a 40 x 40 x 0.7[mm3] ceramic substrate.
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