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  Transistors


  High-current Gain Medium
  Power Transistor (20V, 0.5A)
  2SD2114K / 2SD2144S

FFeatures                       FExternal dimensions (Units: mm)
1) High DC current gain.
   hFE = 1200 (Typ.)
2) High emitter-base voltage.
   VEBO = 12V (Min.)
3) Low VCE(sat).
   VCE(sat) = 0.18V (Typ.)
   (IC / IB = 500mA / 20mA)

FStructure
Epitaxial planar type
NPN silicon transistor




                                                                   (96-232-C107)


232
 Transistors                                 2SD2114K / 2SD2144S

FAbsolute maximum ratings (Ta = 25_C)




FElectrical characteristics (Ta = 25_C)




FPackaging specifications and hFE         FElectrical characteristic curves




hFE values are classified as follows :




                                                                          233
Transistors   2SD2114K / 2SD2144S




234
Transistors                2SD2114K / 2SD2144S




FRon measurement circuit




                                            235

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