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Transistors                                                                                                                       DTA143ZUB


-100mA / -50V Digital transistors
(with built-in resistors)
DTA143ZUB

  Applications                                                                Dimensions (Unit : mm)
Inverter, Interface, Driver
                                                                                UMT3F


                                                                                                                       2.0
 Features                                                                                                      0.32                0.9




                                                                                                  1.25 0.425




                                                                                                                                            0.53
1) Built-in bias resistors enable the configuration of                                                           (3)
   an inverter circuit without connecting external




                                                                                                  2.1
   input resistors (see equivalent circuit).




                                                                                                      0.425
2) The bias resistors consist of thin-film resistors




                                                                                                                                            0.53
                                                                                                                 (1)      (2)
   with complete isolation to allow negative biasing                                                            0.65 0.65     0.13
                                                                                                                   1.3
   of the input. They also have the advantage of
                                                                                                                                   Each lead has same dimensions
   almost completely eliminating parasitic effects.
                                                                              (1) IN
3) Only the on/off conditions need to be set for                              (2) GND
                                                                                                               Abbreviated symbol : 113
   operation, making the device design easy.                                  (3) OUT




  Structure                                                                        Equivalent circuit
PNP silicon epitaxial planar transistor type
(Resistor built-in)
                                                                                                    R1                          OUT
                                                                                        IN

                                                                                                        R2
 Packaging specifications
                                                                                                                                GND(+)
                 Package                               UMT3F
                 Packaging type                        Taping
                                                                                             IN                                 OUT
                 Code                                      TL
 Part No.        Basic ordering unit (pieces)           3000                                                           GND(+)
 DTA143ZUB

                                                                                    R1=4.7k, R2=47k


  Absolute maximum ratings (Ta=25 C)
            Parameter                           Symbol            Limits                Unit
 Supply voltage                                  VCC               -50                   V
 Input voltage                                   VIN             -30 to +5               V
 Collector current                              IC(max.) 1         -100                 mA
 Output current                                   IO               -100                 mA
                                                       2
 Power dissipation                                PD               200                  mW
 Junction temperature                             Tj               150                  

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