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 Transistors                                                                                                                DTC143XEB


100mA / 50V Digital transistors
(with built-in resistors)
DTC143XEB

  Applications                                                                 Dimensions (Unit : mm)
Inverter, Interface, Driver
                                                                                 EMT3F


                                                                                                                    1.6                0.7
 Features                                                                                                   0.26
1) Built-in bias resistors enable the configuration of




                                                                                                                                               0.45
                                                                                                0.86 0.37
                                                                                                              (3)
   an inverter circuit without connecting external




                                                                                                 1.6
   input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors




                                                                                                                                               0.45
                                                                                                     0.37
                                                                                                               (1)          (2)
   with complete isolation to allow negative biasing                                                           0.5 0.5              0.13
   of the input. They also have the advantage of                                                                 1.0

   almost completely eliminating parasitic effects.                            (1) IN                                             Each lead has same dimensions
                                                                               (2) GND
3) Only the on/off conditions need to be set for                               (3) OUT
                                                                                                             Abbreviated symbol : 43
   operation, making the device design easy.




  Structure                                                                     Equivalent circuit
NPN silicon epitaxial planar transistor type
(Resistor built-in)
                                                                                          R1                              OUT
                                                                                IN

                                                                                           R2
 Packaging specifications
                                                                                                                          GND
                 Package                             EMT3F
                 Packaging type                         Taping
                 Code                                    TL                          IN                                   OUT
 Part No.        Basic ordering unit (pieces)            3000
                                                                                                            GND
 DTC143XEB

                                                                               R1=4.7k, R2=10k


 Absolute maximum ratings (Ta=25 C)
            Parameter                            Symbol            Limits       Unit

 Supply voltage                                   VCC                50          V
 Input voltage                                     VIN            -7 to +20      V
                                                 Ic(max)     1      100          mA
 Collector current
                                                         2
 Output current                                    Io               100          mA
 Power dissipation                                 PD               150         mW
 Junction temperature                              Tj               150          

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